• MACOM Gallium Arsenide (GaAs)

    Gallium arsenide (GaAs) contains electronic properties superior to those of silicon, such as higher saturated electron velocity and higher electron mobility, allowing GaAs transistors to function at frequencies over 250 GHz. Due to its wide band gap, GaAs is an ideal material for Monolithic Microwave Integrated Circuits (MMICs), where active ...

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  • Gallium Arsenide - an overview | ScienceDirect Topics

    Gallium arsenide is a semiconducting material composed of equal amounts of the elements gallium and arsenic. It is a member of a group of semiconductors commonly referred to as the III–V, the constituents of which are to be found in groups III and V of the periodic table.

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  • Physical properties of Gallium Arsenide (GaAs)

    Electrical Properties Basic Parameters of Electrical Properties Mobility and Hall Effect Transport Properties in High Electric Fields Impact Ionization Recombination Parameters Optical properties Thermal properties Mechanical properties, elastic constants, lattice vibrations Basic Parameters Elastic Constants Acoustic Wave Speeds

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  • Physical properties of Gallium Arsenide (GaAs)

    Physical properties of Gallium Arsenide (GaAs) Basic Parameters at 300 K Band structure and carrier concentration Basic Parameters of Band Structure and carrier concentration Temperature Dependences Energy Gap Narrowing at High Doping Levels Effective Masses and Density of States Donors and Acceptors Electrical Properties

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  • Gallium arsenide (single crystal substrate), <100>, diam ...

    Gallium arsenide (single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm CAS Number 1303-00-0. Linear Formula GaAs . Molecular Weight 144.64 . EC Number 215-114-8. MDL number MFCD00011017. PubChem Substance ID 24883832

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  • Gallium arsenide - Wikipedia

    Some electronic properties of gallium arsenide are superior to those of silicon. It has a higher saturated electron velocity and higher electron mobility, allowing gallium arsenide transistors to function at frequencies in excess of 250 GHz.

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  • Gallium - Element information, properties and uses ...

    Gallium arsenide has a similar structure to silicon and is a useful silicon substitute for the electronics industry. It is an important component of many semiconductors. It is also used in red LEDs (light emitting diodes) because of its ability to convert electricity to light.

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  • Gallium arsenide | GaAs - PubChem

    Gallium arsenide | GaAs or AsGa | CID 14770 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities ...

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  • Gallium Arsenide (GaAs) Nanoparticles - Properties ...

    Gallium arsenide is a compound semiconductor with a combination of physical properties that has made it an attractive candidate for many electronic applications. From a comparison of various physical and electronic properties of GaAs with those of Si ( [link] ) the advantages of GaAs over Si …

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